*SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. - .MODEL 2N7002 NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=39.9u RD=1.05 RS=1.05 + IS=57.5f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET - One element of dual .MODEL DI_2N7002DW NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=34.2u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002E NMOS( LEVEL=1 VTO=2.50 KP=781u GAMMA=3.10 + PHI=.75 LAMBDA=83.2u RD=0.560 RS=0.560 + IS=120f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002T;DI_2N7002T;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_2N7002T NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET .MODEL DI_2N7002W NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms Diodes Inc. MOSFET .MODEL DI_BS870 NMOS( LEVEL=1 VTO=2.00 KP=32.0m GAMMA=2.48 + PHI=.75 LAMBDA=86.8u RD=0.490 RS=0.490 + IS=125f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=BSS123;DI_BSS123;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc. MOSFET .MODEL DI_BSS123 NMOS( LEVEL=1 VTO=1.00 KP=6.37m GAMMA=1.24 + PHI=.75 LAMBDA=625u RD=0.140 RS=0.140 + IS=85.0f PB=0.800 MJ=0.460 CBD=19.8p + CBS=23.7p CGSO=36.0n CGDO=30.0n CGBO=124n ) * -- Assumes default L=100U W=100U -- *SRC=BSS123W;DI_BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc. MOSFET .MODEL DI_BSS123W NMOS( LEVEL=1 VTO=1.40 KP=0.805 GAMMA=1.74 + PHI=.75 LAMBDA=41.8u RD=0.140 RS=0.140 + IS=85.0f PB=0.800 MJ=0.460 CBD=39.5p + CBS=47.4p CGSO=24.0n CGDO=20.0n CGBO=246n ) * -- Assumes default L=100U W=100U -- *SRC=BSS138;DI_BSS138;MOSFETs N;Enh;50.0V 0.200A 1.40ohms Diodes Inc. MOSFET .MODEL DI_BSS138 NMOS( LEVEL=1 VTO=1.20 KP=7.50m GAMMA=1.49 + PHI=.75 LAMBDA=1.25m RD=0.196 RS=0.196 + IS=100f PB=0.800 MJ=0.460 CBD=18.4p + CBS=22.0p CGSO=28.8n CGDO=24.0n CGBO=247n ) * -- Assumes default L=100U W=100U -- *SRC=BSS138DW;DI_BSS138DW;MOSFETs N;Enh;50.0V 0.200A 1.60ohms Diodes Inc. MOSFET - One element of dual .MODEL DI_BSS138DW NMOS( LEVEL=1 VTO=1.20 KP=50.0m GAMMA=1.49 + PHI=.75 LAMBDA=83.2u RD=0.224 RS=0.224 + IS=100f PB=0.800 MJ=0.460 CBD=56.3p + CBS=67.5p CGSO=96.0n CGDO=80.0n CGBO=324n ) * -- Assumes default L=100U W=100U -- *SRC=BSS138W;DI_BSS138W;MOSFETs N;Enh;50.0V 0.200A 1.60ohms Diodes Inc. MOSFET .MODEL DI_BSS138W NMOS( LEVEL=1 VTO=1.20 KP=50.0m GAMMA=1.49 + PHI=.75 LAMBDA=83.2u RD=0.224 RS=0.224 + IS=100f PB=0.800 MJ=0.460 CBD=56.3p + CBS=67.5p CGSO=96.0n CGDO=80.0n CGBO=324n ) * -- Assumes default L=100U W=100U -- *SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_BSS84 PMOS( LEVEL=1 VTO=-1.60 KP=4.87m GAMMA=1.98 + PHI=.75 LAMBDA=1.25m RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=46.6p + CBS=55.9p CGSO=50.7n CGDO=42.2n CGBO=69.5n ) * -- Assumes default L=100U W=100U -- *SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_BSS84 PMOS( LEVEL=1 VTO=-1.60 KP=4.87m GAMMA=1.98 + PHI=.75 LAMBDA=1.25m RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=46.6p + CBS=55.9p CGSO=50.7n CGDO=42.2n CGBO=69.5n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. - .MODEL 2N7002 NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=39.9u RD=1.05 RS=1.05 + IS=57.5f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *SRC=BSS84DW;DI_BSS84DW;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET- One element of dual .MODEL DI_BSS84DW PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=43.0p + CBS=51.7p CGSO=144n CGDO=120n CGBO=186n ) * -- Assumes default L=100U W=100U -- *SRC=BSS84W;DI_BSS84W;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_BSS84W PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- *SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms Diodes Inc. MOSFET .MODEL DI_DMN100 NMOS( LEVEL=1 VTO=2.00 KP=11.5 GAMMA=2.48 + PHI=.75 LAMBDA=306u RD=21.0m RS=21.0m + IS=550f PB=0.800 MJ=0.460 CBD=199p + CBS=238p CGSO=360n CGDO=300n CGBO=840n ) * -- Assumes default L=100U W=100U -- *SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms Diodes Inc. MOSFET .MODEL DI_MMBF170 NMOS( LEVEL=1 VTO=2.10 KP=18.8m GAMMA=2.60 + PHI=.75 LAMBDA=1.04m RD=0.294 RS=0.294 + IS=250f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U --