* * BF485PN NPN/PNP High Voltage Transistors * .SUBCKT BF485PN 1 2 3 4 5 6 * Q1 6 5 1 TR1 D1 5 6 DIODE Q2 3 2 1 TR2 * * The diode does not reflect a * physical device but improves * only modeling in the reverse * mode of operation. * .MODEL TR1 NPN + IS = 2.035E-14 + NF = 0.9935 + ISE = 3.978E-14 + NE = 1.665 + BF = 130 + IKF = 0.014 + VAF = 25 + NR = 0.992 + ISC = 1E-20 + NC = 2 + BR = 4 + IKR = 0.05 + VAR = 41 + RB = 86.68 + IRB = 4.751E-05 + RBM = 0.01 + RE = 0.1 + RC = 1.121 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 3.796E-11 + VJE = 0.6157 + MJE = 0.3244 + TF = 1.15E-09 + XTF = 37 + VTF = 5 + ITF = 0.06 + PTF = 0 + CJC = 4.4E-12 + VJC = 0.2356 + MJC = 0.3701 + XCJC = 1 + TR = 9E-07 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.9 .MODEL DIODE D + IS = 1.5E-13 + N = 1 + BV = 1000 + IBV = 1E-06 + RS = 900 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 2 .MODEL TR2 PNP + IS = 1.737E-14 + NF = 0.9934 + ISE = 8.208E-15 + NE = 1.559 + BF = 141.4 + IKF = 0.08 + VAF = 350 + NR = 0.9755 + ISC = 2.097E-10 + NC = 1.65 + BR = 2.5 + IKR = 0.06 + VAR = 17 + RB = 70 + IRB = 5E-05 + RBM = 0.3 + RE = 0.418 + RC = 2.5 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 3.916E-11 + VJE = 0.7361 + MJE = 0.3612 + TF = 1.356E-09 + XTF = 19 + VTF = 9 + ITF = 0.2 + PTF = 0 + CJC = 1.071E-11 + VJC = 0.726 + MJC = 0.5717 + XCJC = 0.413 + TR = 3.3E-07 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.999 .ENDS *