* .SUBCKT PBSS4160T 1 2 3 * * housing parasitics LB 1 11 1.3E-09 LE 2 22 1.3E-09 LC 3 33 2.3E-010 CBCG 33 11 6.2E-014 CBEG 22 11 4.5E-014 CCEG 22 33 6.2E-014 * * The diode does not reflect a * physical device but improves * only modeling in the reverse * mode of operation. * Q1 33 11 22 PBSS4160T D1 11 33 DIODE * .MODEL PBSS4160T NPN + IS = 1.829E-013 + NF = 0.9897 + ISE = 3.547E-015 + NE = 1.376 + BF = 420 + IKF = 0.3 + VAF = 65 + NR = 0.987 + ISC = 1.541E-013 + NC = 1.821 + BR = 50 + IKR = 1.1 + VAR = 18 + RB = 15 + IRB = 0.0006 + RBM = 2.3 + RE = 0.055 + RC = 0.114 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 1.157E-010 + VJE = 0.55 + MJE = 0.303 + TF = 5E-010 + XTF = 8 + VTF = 1.5 + ITF = 1.3 + PTF = 0 + CJC = 1.893E-011 + VJC = 0.6185 + MJC = 0.4452 + XCJC = 1 + TR = 4.3E-008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.78 .MODEL DIODE D + IS = 6E-015 + N = 0.9606 + BV = 1000 + IBV = 0.001 + RS = 938.1 + CJO = 0 + VJ = 1 + M = 0.7 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *