* *.SUBCKT PBSS8110Z 1 2 3 4 * * housing parasitics LB 1 11 4.13E-09 LE 3 33 3.77E-09 LC 2 22 4.1E-10 CBCG 22 11 1.76E-13 CBEG 33 11 8.6E-14 CCEG 22 33 1.76E-13 * Q1 22 11 33 PBSS8110Z D1 11 22 DIODE R1 2 4 0 * *The diode does not reflect a *physical device but improves *only modeling in the reverse *mode of operation. * .MODEL PBSS8110Z NPN + IS = 3.138E-013 + NF = 0.9857 + ISE = 4.405E-015 + NE = 1.299 + BF = 300 + IKF = 0.38 + VAF = 23 + NR = 0.9809 + ISC = 1.35E-016 + NC = 0.998 + BR = 55 + IKR = 2.8 + VAR = 48 + RB = 10 + IRB = 0.000431 + RBM = 5.92 + RE = 0.05 + RC = 0.058 + XTB = 0 + EG = 1.11 + XTI = 3 + CJE = 2.86E-010 + VJE = 0.7299 + MJE = 0.3486 + TF = 6E-010 + XTF = 27 + VTF = 1.5 + ITF = 0.6 + PTF = 0 + CJC = 2.39E-011 + VJC = 0.2734 + MJC = 0.3734 + XCJC = 1 + TR = 5.1E-008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.78 .MODEL DIODE D + IS = 1.185E-013 + N = 1 + BV = 1000 + IBV = 0.001 + RS = 500 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *