* * _/_/_/_/_/_/ * _/ _/ * _/_/ _/ STMicroelectronics * _/ _/ * _/_/_/ _/ * www.st.com * * ***************************************************** * Model Generated by STMicroelectronics * * All Rights Reserved * * Commercial Use or Resale Restricted * ***************************************************** * CREATION DATES: 03-08-2006 * * * * POWER IGBT Model (Rev 1.0) * * * * EXTERNAL PINS DESCRIPTION: * * * * PIN 1 -> Collector * * PIN 2 -> Gate * * PIN 3 -> Emitter * * * * ****C**** * * ********************** * * *************************************** * * PARAMETER MODELS EXTRACTED FROM MEASURED DATA * * <<<<<<<<<<<>>>>>>>>>>> * * *************************************** * * THIS MODEL CAN BE USED AT TEMPERATURE: 25 °C * * * ***************************************************** * MODELLING FOR STGF6NC60HD .SUBCKT STGF6NC60HD 1 2 3 LG 10 2 7.5E-09 LE 3 15 7.5E-09 LC 13 1 4.5E-09 RG 10 5 15.001 RC 14 13 0.101E-02 RE 15 12 0.102E-02 RF 7 10 1MEG RX 4 14 1.194 CGE 12 5 0.314E-09 CCG 17 4 0.316E-09 CK 16 4 0.907E-11 DCE 12 14 DE DCG 12 11 DG Q1 12 11 14 Q M1 11 5 12 12 MOS E1 16 5 8 7 1 E2 17 5 6 7 1 G1 7 9 11 10 1u D1 8 9 DI D2 9 6 DI D3 16 4 DO R1 7 8 1MEG R2 7 6 1MEG .MODEL MOS NMOS + LEVEL = 3 + VTO = 5.249 + KP = 3.446 + THETA = 0.337 .MODEL Q PNP + IS = 0.133E-25 + VAF = 10.003 + BF = 0.674 + NE = 1.947 + ISE = 0.187E-12 + IKF = 0.329 + BR = 0.872E-01 + NC = 1.351 + NK = 0.768 + RB = 0.101E-02 + TF = 0.958E-07 + ITF = 0.153 + VTF = 10.589 + XTF = 5.995 .MODEL DI D + IS = 0.01E-12 + CJO = 0.166E-13 .MODEL DO D + IS = 0.01E-12 + CJO = 0.119E-12 + VJ = 0.75 + M = 0.35 .MODEL DE D + IS = 0.01E-12 + CJO = 0.582E-13 + BV = 665 + VJ = 0.75 + M = 0.35 .MODEL DG D + IS = 0.01E-12 + BV = 665 + VJ = 0.75 + M = 0.35 .ENDS STGF6NC60HD * END OF MODELLING