* * _/_/_/_/_/_/ * _/ _/ * _/_/ _/ STMicroelectronics * _/ _/ * _/_/_/ _/ * www.st.com * * ***************************************************** * Model Generated by STMicroelectronics * * All Rights Reserved * * Commercial Use or Resale Restricted * ***************************************************** * REVIEW 2007 * * * * POWER IGBT Model (Rev 1.0) * * * * EXTERNAL PINS DESCRIPTION: * * * * PIN 1 -> Collector * * PIN 2 -> Gate * * PIN 3 -> Emitter * * * * ****C**** * * ********************** * * *************************************** * * PARAMETER MODELS EXTRACTED FROM MEASURED DATA * * <<<<<<<<<<<>>>>>>>>>>> * * *************************************** * * THIS MODEL CAN BE USED AT TEMPERATURE: 25 °C * * * ***************************************************** * MODELLING FOR STGW40NC60V .SUBCKT STGW40NC60V 1 2 3 LG 10 2 7.5E-09 LE 3 15 7.5E-09 LC 13 1 4.5E-09 RG 10 5 1.7 RC 14 13 0.399E-02 RE 15 12 0.695E-03 RF 7 10 1MEG RX 4 14 777.962 CGE 12 5 0.398E-08 CCG 17 4 0.654E-08 CK 16 4 0.139E-09 DCG 12 11 DG Q1 12 11 14 Q M1 11 5 12 12 MOS E1 16 5 8 7 1 E2 17 5 6 7 1 G1 7 9 11 10 1u D1 8 9 DI D2 9 6 DI D3 16 4 DO R1 7 8 1MEG R2 7 6 1MEG .MODEL MOS NMOS + LEVEL = 3 + VTO = 5.274 + KP = 34.453 + THETA = 0.187 .MODEL Q PNP + IS = 0.102E-15 + VAF = 102.035 + BF = 0.241 + NE = 1.613 + ISE = 0.201E-14 + IKF = 0.102E-01 + BR = 0.179E-02 + NC = 2.881 + NK = 0.648 + TF = 1E-06 + ITF = 1 + VTF = 10 + XTF = 0.1 .MODEL DI D + IS = 0.01E-12 + RS = 0 .MODEL DO D + IS = 0.01E-12 + CJO = 50E-12 + VJ = 0.75 + M = 0.35 .MODEL DG D + IS = 0.01E-12 + BV = 675 + VJ = 0.75 + M = 0.35 .ENDS STGW40NC60V * END OF MODELLING *