* MODELLING FOR STW45NM50 .SUBCKT STW45NM50 1 2 3 LG 2 4 7.5n LS 12 3 7.5n LD 6 1 4.5n RG 4 5 1.71517 RS 9 12 0.959647E-02 RD 7 6 0.628261E-01 RJ 8 7 0.430806E-02 CGS 5 9 0.290459E-08 CGD 7 10 0.480554E-08 CK 11 7 0.420553E-10 DGD 11 7 DGD DBS 12 6 DBS DBD 9 7 DBD MOS 13 5 9 9 MOS L=1u W=1u E1 10 5 101 0 1 E2 11 5 102 0 1 E3 8 13 POLY(2) 6 8 6 12 0 0 0 0 0.995568E-01 G1 0 100 7 5 1u D1 100 101 DID D2 102 100 DID R1 101 0 1MEG R2 102 0 1MEG .ENDS STW45NM50 .MODEL MOS NMOS + LEVEL = 3 + VTO = 5.19992 + PHI = 0.974773 + IS = 0 + JS = 0 + THETA = 0.268898 + KP = 44.7605 + Vmax = 284826. + Kappa = 0.370425 + eta = 0.221513E-05 .MODEL DGD D + IS = + CJO = 0.125216E-09 + VJ = 0.731818 + M = 0.343645 .MODEL DBD D + IS = + CJO = 0.329489E-09 + VJ = 0.748544 + M = 0.282137 .MODEL DBS D + IS = 0.1E-12 + BV = 568 + N = 1 + TT = 0.612814E-06 + RS = 0.356724E-02 .MODEL DID D + IS = 2E-12 + RS = 0 + BV = 578 * END OF MODELLING