*SRC=MMBT6427;DI_MMBT6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMBT6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) *SRC=MMBTA13;DI_MMBTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=134 VAF=98.6 + IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=4.00 RB=16.0 RC=1.60 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.77n TR=617n ) .MODEL DSUB D( IS=360f N=1 RS=4.00 BV=30.0 + IBV=.001 CJO=13.9p TT=617n ) .ENDS *SRC=MMBTA14;DI_MMBTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMBTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) .MODEL DSUB D( IS=360f N=1 RS=0.333 BV=30.0 + IBV=.001 CJO=13.9p TT=614n ) *SRC=MMBTA28;DI_MMBTA28;BJTs NPN;Darlington;80.0V 0.500A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA28 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=134 VAF=161 + IKF=0.400 ISE=36.5p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.500 RB=2.00 RC=0.200 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=6.15n TR=1.01u ) .MODEL DSUB D( IS=600f N=1 RS=0.500 BV=80.0 + IBV=.001 CJO=13.9p TT=1.01u ) .ENDS *SRC=MMBTA63;DI_MMBTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMBTA64;DI_MMBTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMST6427;DI_MMST6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMST6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) *SRC=MMSTA13;DI_MMSTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=100 VAF=98.6 + IKF=0.240 ISE=29.4p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMSTA14;DI_MMSTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMSTA63;DI_MMSTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMSTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMSTA64;DI_MMSTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMSTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )