* http://www.aosmd.com/web/products/mosfet.jsp * I have changed the level=5 to level=3 in the AO4468 and AOD456. * I have also changed LAMBDA=1.5 to KAPPA=1.5 in the model AO4468. * .SUBCKT AO4468 4 1 2 M1 10 5 7 8 NMOS W=556190u L=1u M2 8 5 8 10 PMOS W=1312500u L=1.1u R1 4 10 RTEMP 4.8E-3 CGS 5 7 460E-12 R2 8 7 0.1E-3 * Parasitic Body BJT: E: 7, B: 8, C: 9 Q3 10 8 7 QBODY RG 6 5 0.7 LG 1 6 1n LS 2 7 1n ********************************************************************* .MODEL NMOS NMOS (LEVEL = 3 TOX = 4.5E-8 + RS = 3E-4 RD = 0 VTO=2 + UO = 800 THETA = 0.1 NSUB=2.0e17 + VMAX = 8E6 XJ = 5.1E-7 KAPPA=1.5 + ETA = 0 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 ) ********************************************************************** .MODEL PMOS PMOS (LEVEL = 3 TOX = 4.5E-8 +NSUB = 1.2E16 NSS=-4E11 TPG = -1) ********************************************************************** .MODEL QBODY NPN (IS=1.2E-12 Xti=0 Eg=1.11 +BR=1 CJC=80E-12 MJC=0.35 +TR=3E-9 XTB=0 VJC=0.55) ********************************************************************** .MODEL RTEMP RES (TC1=3.6E-3 TC2=1E-6) ********************************************************************** .ENDS .SUBCKT AO3414 4 1 2 M1 3 1 2 2 NMOS W=391872u L=1.0u M2 2 1 2 4 PMOS W=391872u L=0.93u R1 4 3 RTEMP 32E-3 CGS 1 2 1E-12 DBD 2 3 DBD ************************************************************************** .MODEL NMOS NMOS (LEVEL = 3 TOX = 1.5E-8 + RS = 1e-4 RD = 0 NSUB = 1.2E17 + UO = 225 VTO=0.81 THETA = 0 + VMAX = 0 XJ = 4E-7 KAPPA = 0.01 + ETA = 0 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + NFS = 2E10 DELTA = 0.1) ************************************************************************* .MODEL PMOS PMOS (LEVEL = 3 TOX = 1.5E-8 +NSUB = 2.0E16 NSS=-6E11 TPG = -1) ************************************************************************* .MODEL DBD D (CJO=46E-12 VJ=0.8 M=0.3 +RS=0.02 FC=0.5 IS=1.3E-9 TT=1.5E-7 N=1 BV=36 IBV=1E-4) ************************************************************************* .MODEL RTEMP RES (TC1=2.0E-3 TC2=3E-6) ************************************************************************* .ENDS .SUBCKT AOD456 4 1 2 M1 10 5 7 8 NMOS W=2560000u L=1.0u M2 8 5 8 10 PMOS W=3322449u L=0.4u R1 4 10 RTEMP 3.6E-3 CGS 5 7 1E-12 * RGS 1 2 1M R2 8 7 0.10E-3 *CBS 8 7 310E-12 *R3 9 4 3E-3 * CDB 4 5 5E-12 * Parasitic Body BJT: E: 7, B: 8, C: 9 Q3 10 8 7 QBODY RG 6 5 0.86 LG 1 6 3n LS 2 7 3n * BC breakdown by avalanche diode *DBD 8 9 DBD ********************************************************************* .MODEL NMOS NMOS (LEVEL = 3 TOX = 4.5E-8 + RS = 3E-4 RD = 0 VTO=2.5 + UO = 930 THETA = 0.1 NSUB=2.0e17 + VMAX = 8E6 XJ = 5.1E-7 KAPPA = 6 + ETA = 0 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + NFS = 2E10 DELTA = 0.1) ********************************************************************** .MODEL PMOS PMOS (LEVEL = 3 TOX = 4.5E-8 +NSUB = 5.5E16 TPG = -1) ********************************************************************** .MODEL QBODY NPN (IS=1.5E-12 Xti=1 Eg=1.11 + BR=1 NC=2 + CJC=780E-12 MJC=0.4 VJC=0.55 + TR=3E-9 XTB=0 ) ********************************************************************** .MODEL DBD D (CJO=1.2E-12 VJ=0.55 M=0.497 +RS=0 FC=0.5 IS=5E-12 TT=15E-9 N=1.0 BV=30 IBV=250E-6) ********************************************************************** .MODEL RTEMP RES (TC1=3.8E-3 TC2=3.6E-6) ********************************************************************** .ENDS