Version 4
SHEET 1 1348 1504
WIRE -160 176 -560 176
WIRE -160 240 -160 176
WIRE -560 304 -560 176
WIRE -208 320 -320 320
WIRE -320 368 -320 320
WIRE -560 480 -560 384
WIRE -320 480 -320 448
WIRE -160 480 -160 336
FLAG -160 480 0
FLAG -320 480 0
FLAG -560 480 0
SYMBOL mesfet -208 240 R0
SYMATTR InstName Z1
SYMATTR Value ATF34143
SYMATTR Prefix X
SYMBOL voltage -560 288 R0
SYMATTR InstName VDS
SYMATTR Value 5
SYMBOL voltage -320 352 R0
SYMATTR InstName VGS
SYMATTR Value 5
TEXT 232 88 Left 0 ;*ATF-34143 packaged FET model\n.SUBCKT ATF34143  16   14   15\n \nRR2     2       1       0.1  \nRR9     4       3       0.1  \nRR5     1       5       0.1  \nLL2     5       SOURCE  0.1nH  \nLL7     SOURCE  7       0.1nH  \nLL6     SOURCE  8       0.1nH  \nRR6     8       2       0.1  \nRR7     7       2       0.1  \nRR8     DRAIN   9       0.1  \nLL5     9       11      0.1nH  \nLL8     2       15      0.05nH  \nLL10    15      1       0.1nH  \nLL1     14      4       0.8nH  \nLL9     11      16      0.6nH  \nCC3     11      2       0.15e-12  \nCC4     1       4       0.15e-12  \nLL4     3       GATE    0.1nH  \n \n*CALL DIE MODEL\nXDIE    DRAIN   GATE    SOURCE  BATF34143\n.ENDS\n \n****     GaAs MESFET MODEL PARAMETERS\n.SUBCKT ATF34   D       G       S       \n.MODEL BATF34143 GASFET ( LEVEL=2, Vto=-0.95, Beta=0.24, Lambda=0.09, Alpha=4, \n                    +   B=0.8, Tnom=27, Vbi=0.7, Delta=0.2, Cgs=0.8 pF, \n                    +   Cgd=0.16 pF, Rd=0.25, Rg=1, Rs=0.125, Cds=0.04 pF, \n                    +  Is=1 nA, P=0.65)        \n                    .ENDS\n \n \n**ATF-34 FET chip Statz model parameters for small signal operation.\n \n*STATZ FET MODEL\n \n*                    IDS model       Gate model      Parasitics      Breakdown       Noise\n                     \n*                    NFET=yes        Delta1=0.2      Rg=1            Gsfwd=1         Fnc=1E6\n*                    PFET=no         Gscap=3         Rd=0.25         Gsrev=0         R=0.17\n*                    Idsmod=3        Cgs=0.8 pF      Rs=0.125        Gdfwd=1         C=0.2\n*                    Vto=-0.95       Gdcap=3         Lg=.0075 nH     Gdrev=0         P=0.65\n*                    Beta=0.24       Cgd=0.16 pF     Ld=.0075 nH     Vjr=1\n*                    LAMBDA=0.09     Cds=0.04 pF     Ls=.0025 nH     \n*                    Alpha=4         Crf=0.1         Is=1 nA\n*                    B=0.8           Rc=125          Ir=1 nA\n*                    Tnom=27                         Imax=0.1\n*                    Vbi=0.7
TEXT -552 96 Left 0 !.op
TEXT 24 48 Left 0 ;http://www.avagotech.com/products/rfics%1Cdiscretes/transistors/gaas_field_effect/atf-34143/
TEXT -584 712 Left 0 !*ATF-34143 packaged FET model\n.SUBCKT ATF34143 16 14 15\n \nRR2 2 1 0.1\nRR9 4 3 0.1\nRR5 1 5 0.1\nLL2 5 SOURCE 0.1nH\nLL7 SOURCE 7 0.1nH\nLL6 SOURCE 8 0.1nH\nRR6 8 2 0.1\nRR7 7 2 0.1\nRR8 DRAIN 9 0.1\nLL5 9 11 0.1nH\nLL8 2 15 0.05nH\nLL10 15 1 0.1nH\nLL1 14 4 0.8nH\nLL9 11 16 0.6nH\nCC3 11 2 0.15e-12\nCC4 1 4 0.15e-12\nLL4 3 GATE 0.1nH\n \n*CALL DIE MODEL\nZ1 DRAIN GATE SOURCE BATF34143\n.MODEL BATF34143 NMF (Vto=-0.95, Beta=0.24, B=0.8, Alpha=4,\n+ Lambda=0.09, Rd=0.25, Rs=0.125,Cgs=0.8e-12, Cgd=0.16e-12, Pb=0.7)\n \n.ENDS
TEXT -560 560 Left 0 ;Ctr-RightMouseClick on the device\nChange to Prefix:X
TEXT -552 128 Left 0 !.dc VDS 0 5 .1 VGS -1 0 .2