Version 4 SHEET 1 1792 2040 WIRE 0 544 0 512 WIRE 0 576 0 544 WIRE 0 672 0 656 WIRE 224 544 0 544 WIRE 272 320 272 288 WIRE 272 352 272 320 WIRE 272 464 272 432 WIRE 272 672 0 672 WIRE 272 672 272 560 WIRE 272 688 272 672 WIRE 400 320 272 320 WIRE 400 336 400 320 WIRE 400 448 400 416 FLAG 272 688 0 FLAG 272 288 DD FLAG 0 512 GG FLAG 400 448 0 SYMBOL nmos 224 464 R0 SYMATTR InstName M1 SYMATTR Value Si4884BDY SYMATTR Prefix X SYMBOL voltage 0 560 R0 WINDOW 123 0 0 Left 0 WINDOW 39 0 0 Left 0 WINDOW 3 55 56 Left 0 SYMATTR Value 0 SYMATTR InstName V2 SYMBOL voltage 400 320 R0 WINDOW 123 0 0 Left 0 WINDOW 39 0 0 Left 0 SYMATTR InstName V1 SYMATTR Value 0 SYMBOL voltage 272 336 R0 WINDOW 123 0 0 Left 0 WINDOW 39 0 0 Left 0 SYMATTR InstName V3 SYMATTR Value 0 TEXT 472 -32 Left 0 !*Oct 3, 2005\n*Doc. ID: 77864, S-51942, Rev. A\n*File Name: Si4884BDY_PS.txt and Si4884BDY_PS.lib\n.SUBCKT Si4884BDY 4 1 2\nM1 3 1 2 2 NMOS W=2905261u L=0.25u \nM2 2 1 2 4 PMOS W=2905261u L=0.30u \nR1 4 3 RTEMP 30E-4\nCGS 1 2 990E-12\nDBD 2 4 DBD\n**************************************************************** \n.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5E-8\n+ RS = 35E-4 RD = 0 NSUB = 2.95E17 \n+ kp = 2.1E-5 UO = 650 \n+ VMAX = 0 XJ = 5E-7 KAPPA = 3E-1\n+ ETA = 1E-4 TPG = 1 \n+ IS = 0 LD = 0 \n+ CGSO = 0 CGDO = 0 CGBO = 0 \n+ NFS = 0.8E12 DELTA = 0.1)\n**************************************************************** \n.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5E-8\n+NSUB = 1.7E16 TPG = -1) \n**************************************************************** \n.MODEL DBD D (CJO=600E-12 VJ=0.38 M=0.30 \n+FC=0.1 IS=1E-12 TT=6E-8 N=1 BV=30.2)\n**************************************************************** \n.MODEL RTEMP RES (TC1=9E-3 TC2=5.5E-6)\n**************************************************************** \n.ENDS TEXT -82 324 Left 0 !.dc v1 0 25 .1 v2 3 6 .5 TEXT -40 256 Left 0 ;DC curve tracer sweep