* FQA33N10 100V N-CHANNEL DMOSFET ELECTRICAL PARAMETERS *------------------------------------------------------------------------------------ .SUBCKT FQA33N10 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.88*{-0.00063*TEMP+1.01575}} KP={26.6*{-0.000082*TEMP+1.00205}} + THETA=0.056 VMAX=0.92E5 LEVEL=3) Cgs 1 3 1088p Rd 20 4 24m TC=0.0087 Dds 3 4 DDS .MODEL DDS D(BV={100*{0.001*TEMP+0.975}} M=0.5 CJO=258p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=2.5E-12 N=1.0 RS=3.6m EG=1.14 TT=80n) Ra 4 2 8m TC=0.0087 Rs 3 5 0.8m Ls 5 30 2.6n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2075p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.76 CJO=2075p VJ=0.45) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FQA33N10