*BS170/MMBF170 at Temp. Electrical Model *----------------------------------------- .SUBCKT BS/MMBF170 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=2.9 KP=8.2E-1 +THETA=0.05 VMAX=0.8E5 LEVEL=3) Cgs 1 5x 27p Rd 20 4 3.8E-1 Dds 5x 4 DDS .MODEL DDS D(M=4.78E-1 VJ=1.22 CJO=27p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=1.94E-12 N=1.201763 RS=0.00355 TT=43.65n) Ra 4 2 3.8E-1 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 58p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 6 4 10meg .MODEL DGD D(M=4.25E-1 VJ=8.38E-2 CJO=58p) M3 7 9 1 1 INTER E3 9 1 4 1 -2 *ZX SECTION EOUT 4x 6x poly(2) (1x,0) (3x,0) 0 0 0 0 1 FCOPY 0 3x VSENSE 1 RIN 1x 0 1G VSENSE 6x 5x 0 RREF 3x 0 10m *TEMP SECTION ED 101 0 VALUE {V(50,100)} VAMB 100 0 25 EKP 1x 0 101 0 .82 *VTO TEMP SECTION EVTO 102 0 101 0 .005 EVT 12x 11x 102 0 1 *DIODE THEMO BREAKDOWN SECTION EBL VB1 VB2 101 0 .08 VBLK VB2 0 60 D 20 DB1 DBLK .MODEL DBLK D(IS=1E-14 CJO=.1p RS=.1) EDB DB1 0 VB1 0 1 .ENDS BS/MMBF170 *BS170/MMBF170 (Rev.B) 8/6/02 **ST